| PART |
Description |
Maker |
| S29GL01GP S29GL-P12 S29GL01GP11TFIR20 S29GL256P90T |
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
MirrorBit? Flash Family
MirrorBit? Flash Family
|
SPANSION
|
| V53C318165A50 V53C318165A70 |
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM
3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM 3.3100万16 EDO公司页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| 23C1611-10 23C1611-12 |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
Macronix International Co., Ltd.
|
| AS4C4M4DG-7_IT AS4C4M4DG-7_XT AS4C4M4DG-6_IT AS4C4 |
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT
|
Austin Semiconductor
|
| AT49BV6416 AT49BV6416-70TI AT49BV6416T-70TI AT49BV |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
ATMEL[ATMEL Corporation]
|
| MX23C1611TC-12 23C1611-10 23C1611-12 MX23C1611 MX2 |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| AT49BV6416T-70TI AT49BV6416-70TU AT49BV6416-70TI |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
Atmel Corp.
|
| MX23C3211 MX23C3211MC-10 MX23C3211MC-12 MX23C3211R |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| AT28LV010NBSP AT28LV010 |
1M bit EEPROM with 128-Byte Page & Software Protection, 3.0-Volt
From old datasheet system
|
Atmel Corp
|
| S70GL01GN00 S70GL01GN00FFI120 S70GL01GN00FFI122 S7 |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
